Comparison of hot-carrier effects in deep submicron N- and P-channel partially- and fully-depleted unibond and SIMOX MOSFETs

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1998, Pages 203-208

  Renn, S H ^a   Raynaud, C ^a   Pelloie, J L ^a   Balestra, F ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; MOSFET DEVICES; RELIABILITY; SILICON ON INSULATOR TECHNOLOGY;

HOT CARRIER EFFECTS; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

HOT CARRIERS;

EID: 0031699758     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1998.670545     Document Type: Conference Paper

References (17)