Characteristics of ALD HfSiOx using new Si precursors for gate dielectric applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 511-514

  Kim, Yun Seok ^a   Lim, Ha Jin ^a   Jung, Hyung Suk ^a   Lee, Jong Ho ^a   Park, Jae Eun ^a   Han, Sung Kee ^a   Lee, Jung Hyoung ^a   Doh, Seok Joo ^a   Kim, Jong Pyo ^a   Lee, Nae In ^a   Chung, Youngsu ^b   Kim, Hae Young ^c   Lee, Nam Kyu ^c   Ramanathan, Sasangan ^c   Seidel, Tom ^c   Boleslawski, Marek ^d   Irvine, Geoff ^d   Kim, Byung Ki ^e   Lee, Hyeung Ho ^e   Kang, Ho Kyu ^a  

^a SAMSUNG Electronics   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c AIXTRON Inc   (United States)

^d Sigma Aldrich Co   (United States)

^e Union Material Tech Co   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; DEPOSITION; DIELECTRIC MATERIALS; ELECTRON MOBILITY; ETCHING; HOLE MOBILITY; LEAKAGE CURRENTS; MOSFET DEVICES; X RAY PHOTOELECTRON SPECTROSCOPY; ATOMIC LAYER DEPOSITION; GATE DIELECTRICS; HAFNIUM COMPOUNDS; SILICON; SILICON COMPOUNDS;

ATOMIC LAYER DEPOSITION (ALD); GATE DIELECTRICS; LEAKAGE CURRENT DENSITY; OXIDIZING AGENTS;

HAFNIUM COMPOUNDS; HOLE MOBILITY;

CMOSFETS; COMPOSITIONAL CONTROL; ELECTRONS AND HOLES; GATE DIELECTRIC APPLICATIONS; RELIABILITY CHARACTERISTICS;

EID: 21644437889     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. A.L.P. Rotondaro, el al., "Advanced CMOS Transistors with a Novel HfSiON Gate Dielectric," Symp. VLSI Tech., p.148, 2002.
2. S. Inumiya, et al., "Fabrication of HfSiON Gate Dielectrics by Plasma Oxidation and Nitridation, Optimized for 65nm Node Low Power CMOS Applications," Symp. VLSI Tech., p. 17, 2003.
3. A. Morioka, et al., "High Mobility MISFET with Low Trapped Charge in HfSiO Films," Symp. VLSI Tech., p. 165, 2003.
4. + Poly Si gates Using Chemical Oxides and Optimized Post-Annealing," Symp. VLSI Tech., p.88, 2002.
5. 3 Laminate Gate Dielectric," Tech. Dig. IEDM, p.853, 2002.
6. A.S. Dates, "Reliability Issues for High-k Gate Dielectrics," Tech. Dig. IEDM, p.923, 2003.