A novel GaN device with thin AIGaN/GaN heterostructure for high-power applications

Furukawa Review

Volumn , Issue 29, 2006, Pages 1-6

  Ikeda, Nariaki ^a   Li, Jiang ^a   Kato, Sadahiro ^a   Masuda, Mitsuru ^a   Yoshida, Seikoh ^a  

^a Yokohama Research Laboratory   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION FIELD EFFECT TRANSISTOR; HETEROSTRUCTURE EPITAXIAL LAYERS; ON STATE RESISTANCES; POWER SUPPLIES;

ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICES;

GALLIUM NITRIDE;

EID: 33645567769     PISSN: 13481797     EISSN: 13481797     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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6. Seikoh Yoshida, Jiang Li, Takahiro Wada, and Hironari Takehara "High-Power AlGaN/GaN HFET with a Lower On-state Resistance and a Higher Switching Time for an Inverter Circuit", in Proc. 15th ISPSD, pp.58-61,2003.
7. V Kumar, A. Kuliev, T. Tanaka, Y. Otoki, and I. Adesida, Electronics Letters, 39,24,1758 (2003).
8. Nariaki Ikeda, Jiang Li, and Seikoh Yoshida, "Normally-off operation power AlGaN/GaN HFET" Proceeding of ISPSD'2004, p.369-372, 2004.
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