Normally-off operation GaN HFET using a thin AlGaN layer for low loss switching devices

Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 355-360

  Ikeda, Nariaki ^a   Kato, Kazuo ^a   Li, Jiang ^a   Hataya, Kohji ^a   Yoshida, Seikoh ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NATURAL FREQUENCIES; POWER SUPPLY CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SWITCHING;

FAIL SAFE SYSTEMS; HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFET); ON-STATE RESISTANCE (RON); SWITCHING SPEED;

FIELD EFFECT TRANSISTORS;

EID: 23844477524     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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