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Volumn 45, Issue 3 B, 2006, Pages 2144-2147

First-principles study of the step oxidation at vicinal Si(001) surfaces

Author keywords

Density of states; Electronic structure; First principles calculation; Oxidation; Scanning tunneling microscopy; Si(001) surface

Indexed keywords

ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; IMAGE ANALYSIS; MONOLAYERS; OXIDATION; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE;

EID: 33645550622     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2144     Document Type: Article
Times cited : (4)

References (37)
  • 25
    • 33645549548 scopus 로고    scopus 로고
    • C.-H. Chung et al.: in preparation
    • C.-H. Chung et al.: in preparation.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.