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Volumn 45, Issue 3 B, 2006, Pages 2144-2147
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First-principles study of the step oxidation at vicinal Si(001) surfaces
e
NEC CORPORATION
(Japan)
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Author keywords
Density of states; Electronic structure; First principles calculation; Oxidation; Scanning tunneling microscopy; Si(001) surface
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Indexed keywords
ELECTRONIC DENSITY OF STATES;
ELECTRONIC STRUCTURE;
IMAGE ANALYSIS;
MONOLAYERS;
OXIDATION;
SCANNING TUNNELING MICROSCOPY;
SURFACE STRUCTURE;
DANGLING BONDS (DBS);
FIRST-PRINCIPLES CALCULATION;
OXIDATION STRUCTURE;
SI(001) SURFACE;
SILICON;
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EID: 33645550622
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.45.2144 Document Type: Article |
Times cited : (4)
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References (37)
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