Comparison of ion-beam-assisted molecular beam epitaxy with conventional molecular beam epitaxy of thin hexagonal gallium nitride films

Journal of Crystal Growth

Volumn 264, Issue 1-3, 2004, Pages 184-191

  Sienz, S ^a   Gerlach, J W ^a   Hoche T ^a   Sidorenko, A ^a,d   Mayerhofer T G ^b   Benndorf, G ^c   Rauschenbach, B ^a,c  

^a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^c UNIVERSITY OF LEIPZIG   (Germany)

^d UNIVERSITY OF TÜBINGEN   (Germany)

Author keywords

A1. Ion beam; A3. Ion beam assisted deposition; A3. Molecular beam epitaxy; B1. Gallium nitride

Indexed keywords

CRYSTAL DEFECTS; ELECTRONIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION BEAM ASSISTED DEPOSITION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PROBABILITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ION-BEAM IRRADIATION; SURFACE MOBILITY;

GALLIUM NITRIDE;

EID: 1342285519     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.01.027     Document Type: Article

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