Al xGa 1-x) 0.5In 0.5P /In 0.15Ga 0.85As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applications

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2906-2910

  Yang, Shih Cheng ^a,b   Chiu, Hsien Chin ^b   Chan, Yi Jen ^a,b   Lin, Hao Hsiung ^a,c   Kuo, Jenn Ming ^a,d  

^a IEEE   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d NOKIA RESEARCH CENTER   (United States)

Author keywords

AlGaInP; Doped channel FET; rf power performance

Indexed keywords

SCHOTTKY LAYERS;

COMPOSITION EFFECTS; HETEROJUNCTIONS; MICROWAVE DEVICES; POWER ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SUBSTRATES;

FIELD EFFECT TRANSISTORS;

EID: 0035694431     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974726     Document Type: Article

References (11)

1. 1-xAs
2. Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling technique
3. 0.85As/GaAs heterostructure field effect transistors with very thin highly p-doped surface layer
4. 0.8As heterostructures
5. Interface optimization of AlInP/GaAs multiple quantum wells grown by gas source molecular beam eitaxy
6. y for precise control of HJFET threshold
7. 0.5P quaternary compounds using chlorine and fluorine mixing plasma
8. 0.5P (0 ≤ x ≤ 1) lattice matched to GaAs
9. Optical measurements of electronic bandstructure in AlGaInP alloys grown by gas source molecular beam epitaxy
10. Interface properties for GaAs/InGaAlP hetero-junctions by the capacitance-voltage profiling technique
11. 1-x As interface