2 V-operated InGaP-AlGaAs-InGaAs enhancement-mode pseudomorphic HEMT

IEEE Electron Device Letters

Volumn 26, Issue 2, 2005, Pages 53-55

  Chu, L H ^a   Chang, E Y ^a   Chen, S H ^a   Lien, Y C ^a   Chang, C Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Enhancement mode; InGaP; InGaP InGaAs; PHEMT; Single voltage supply

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRIC POWER SUPPLIES TO APPARATUS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

ENHANCEMENT MODE; OSCILLATION FREQUENCY; POWER ADDED EFFICIENCY; PSEUDOMORPHIC HEMT; SINGLE VOLTAGE SUPPLY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 13444273450     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.841184     Document Type: Article

References (12)

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