Faceting transition in epitaxial growth of dilute GaNAs films on GaAs

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1417-1421

  Adamcyk, M ^a   Tixier, S ^a   Ruck, B J ^a   Schmid, J H ^a   Tiedje, T ^a   Fink, V ^b   Jeffries, M ^b   Karaiskaj, D ^b   Kavanagh, K L ^b   Thewalt, M ^b  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^b SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HIGH TEMPERATURE PROPERTIES; LIGHT SCATTERING; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITROGEN; PHASE TRANSITIONS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BEAM EQUIVALENT PRESSURE; HIGH ARSENIC FLUX; HIGH GROWTH TEMPERATURE; HIGH NITROGEN CONTENT; POWER SPECTRAL DENSITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035535274     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1386379     Document Type: Conference Paper

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