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Journal of Applied Physics

Volumn 99, Issue 5, 2006, Pages

Growth of Ge quantum dots on Si(100)-(2×1) by pulsed laser deposition

(2) Hegazy, M S a Elsayed Ali, H E a

a Old Dominion University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

REFLECTION-HIGH ENERGY ELECTRON DIFFRACTION (RHEED); SELF-ASSEMBLED GERMANIUM QUANTUM DOTS (QDS); SUBSTRATE TEMPERATURE; YTTRIUM ALUMINUM GARNET LASER;

CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; GERMANIUM COMPOUNDS; GROWTH KINETICS; PULSED LASER DEPOSITION; Q SWITCHED LASERS; SILICON COMPOUNDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33645294916 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2178679 Document Type: Article

Times cited : (11)

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