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Volumn 99, Issue 5, 2006, Pages

Influence of GaNAs strain-compensation layers on the optical properties of Galn(N)As/GaAs quantum wells upon annealing

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

INTERDIFFUSION; QW INTERFACES; STRAIN-COMPENSATING LAYERS (SCL); VACANCY DEFECTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33645237292 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2178399 Document Type: Article

Times cited : (11)

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