Structural and electrical studies on fluorinated amorphous carbon films as intermetal dielectric layer in ULSI devices

Thin Solid Films

Volumn 506-507, Issue , 2006, Pages 82-86

  Ko, H J ^a   Lee, K M ^a   Lee, H J ^a   Choi, C K ^a  

^a Jeju National University   (South Korea)

Author keywords

a C:F film; Dielectric constant; ICPCVD; XPS

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; METHANE; PERMITTIVITY; PLASMAS; X RAY PHOTOELECTRON SPECTROSCOPY;

A-C:F FILM; BULK TRAPS; ICPCVD; TRAPPED CHARGES;

AMORPHOUS FILMS;

EID: 33645213909     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.094     Document Type: Conference Paper

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