Critical dimension control in photolithography based on the yield by a simulation program

Microelectronics Reliability

Volumn 46, Issue 5-6, 2006, Pages 1006-1012

  Kang, H Y ^a   Lee, A H I ^b  

^a NATIONAL CHIN YI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b CHUNG HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRITICAL CURRENTS; MEASUREMENT THEORY; PARAMETER ESTIMATION; PROCESS CONTROL; SILICON WAFERS;

CRITICAL DIMENSION (CD); MANUFACTURING SPECIFICATIONS; MEASUREMENT INDEXES; PROCESS YIELDS;

PHOTOLITHOGRAPHY;

EID: 33645167906     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.08.003     Document Type: Conference Paper

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