Statistical design of experiments and analysis on gate poly-silicon critical dimension

IEEE Transactions on Semiconductor Manufacturing

Volumn 17, Issue 3, 2004, Pages 362-374

  Park, Sungmin ^a  

^a Baekseok University   (South Korea)

Author keywords

Analysis of variance; Critical dimension; Design of experiments; Uniformity test; Variance components

Indexed keywords

DATA ACQUISITION; DECISION MAKING; INTEGRATED CIRCUIT LAYOUT; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE MANUFACTURE; STATIC RANDOM ACCESS STORAGE; STATISTICAL METHODS; TRANSISTORS;

ANALYSIS OF VARIANCE; CRITICAL DIMENSIONS; DESIGN OF EXPERIMENTS; UNIFORMITY TESTS; VARIANCE COMPONENTS;

POLYSILICON;

EID: 4344602000     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2004.831526     Document Type: Conference Paper

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