Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 399-402

  Yamaoka, K ^a   Yoshizako, Y ^a   Kato, H ^a   Tsukiyama, D ^a   Terai, Y ^a   Fujiwara, Y ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Low dielectric materials; PECVD; TEOS

Indexed keywords

ELECTRON ENERGY LEVELS; ENERGY GAP; FERMI LEVEL; GERMANIUM ALLOYS; NEUTRONS; SELENIUM; SPECTROSCOPY;

DEEP-LEVEL ELECTRONIC STATES; FERMI LEVEL SCAN SPECTROSCOPY; GE ISOTOPES; NEUTRON TRANSMUTATION DOPING; SI-GE ALLOYS;

SILICON ALLOYS;

EID: 33645164599     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.103     Document Type: Conference Paper

References (13)

1. A. Grill, and V. Patel J. Appl. Phys. 85 1999 3314
2. M.J. Loboda Microelectron. Eng. 50 2000 15
3. R.S. Brusa, M. Spagolla, G.P. Karwasz, A. Zecca, G. Ottaviani, F. Corni, M. Bacchetta, and E. Carollo J. Appl. Phys. 95 2004 2348
4. M.R. Wang, Rusli, M.B. Yu, N. Babu, C.Y. Li, and K. Rakesh Thin Solid Films 462/463 2004 219
5. Y.-H. Kim, S.-K. Lee, and H.J. Kim J. Vac. Sci. Technol. A 18 2000 1216
6. A. Grill J. Appl. Phys. 93 2003 1785
7. C.S. Pai, and C.-P. Chang J. Appl. Phys. 68 1990 793
8. S.C. Deshmukh, and E.S. Aydil Appl. Phys. Lett. 65 1994 3185
9. C. Vallée, A. Goullet, A. Granier, A. van der Lee, J. Durand, and C. Marlière J. Non-Cryst. Solids 272 2000 163
10. L.C.D. Gonçalves, C.E. Viana, J.C. Santos, and N.I. Morimoto Surf. Coat. Technol. 180/181 2004 275
11. S.P. Mukherjee, and P.E. Evans Thin Solid Films 14 1972 105
12. S.C. Deshmukh, and E.S. Aydil J. Vac. Sci. Thechnol. B 14 1996 738
13. M.A. Lieberman, A.J. Lichtenberg, in: Principles of Plasma Discharges and Materials Processing, Wiley-Interscience, New York, 1994, pp. 518-521.