Interactions between charged residues in the transmembrane segments of the voltage-sensing domain in the hERG channel

Journal of Membrane Biology

Volumn 207, Issue 3, 2005, Pages 169-181

  Zhang, M ^a   Liu, J ^b   Jiang, M ^a   Wu, D M ^a   Sonawane, K ^c   Guy, H R ^c   Tseng, G N ^a  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^b PEKING UNIVERSITY   (China)

^c NATIONAL CANCER INSTITUTE   (United States)

Author keywords

Mutagenesis; Oocytes; Structure function relationship; Voltage clamp; Voltage gated K channel; Xenopus laevis

Indexed keywords

POTASSIUM CHANNEL; POTASSIUM CHANNEL HERG;

ANIMAL CELL; ARTICLE; CHANNEL GATING; CONFORMATION; EXTRACELLULAR SPACE; GENE MUTATION; INTRACELLULAR SPACE; INTRACELLULAR TRANSPORT; ION TRANSPORT; LIPID BILAYER; MEMBRANE DEPOLARIZATION; MEMBRANE POTENTIAL; NONHUMAN;

AMINO ACID SEQUENCE; AMINO ACID SUBSTITUTION; AMINO ACIDS; ANIMALS; BINDING SITES; CELL MEMBRANE; ELECTROSTATICS; ETHER-A-GO-GO POTASSIUM CHANNELS; ION CHANNEL GATING; MEMBRANE POTENTIALS; MEMBRANE PROTEINS; MOLECULAR SEQUENCE DATA; MUTAGENESIS, SITE-DIRECTED; OOCYTES; PROTEIN BINDING; PROTEIN STRUCTURE, TERTIARY; STRUCTURE-ACTIVITY RELATIONSHIP; XENOPUS LAEVIS;

ANIMALIA; XENOPUS LAEVIS;

EID: 33645122652     PISSN: 00222631     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00232-005-0812-1     Document Type: Article

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