The improvement of copper interconnect electromigration resistance by cap/dielectric interface treatment and geometrical design

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 229-233

  Lin, M H ^a   Lin, Y L ^a   Chen, J M ^a   Tsai, C C ^a   Yeh, M S ^a   Liu, C C ^a   Hsu, S ^a   Wang, C H ^a   Sheng, Y C ^a   Chang, K P ^a   Su, K C ^a   Chang, Y J ^a   Wang, Tahui ^b  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTROMIGRATION; RELIABILITY; SILICIDES;

CAP-LAYER DEPOSITIONS; COPPER INTERCONNECTS; ELECTROMIGRATION RELIABILITY; ELECTROMIGRATION RESISTANCE; GEOMETRICAL DESIGNS; LIFETIME ENHANCEMENT; POSSIBLE MECHANISMS; SILICIDE FORMATION;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84932092622     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315328     Document Type: Conference Paper

References (8)

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2. M. Hatano et al., ''EM Lifetime improvement of Cu damascene Tnterconnect by P-SiC cap layer", IEEE IITC p.212, 2002.
3. C.-K. Hu et al., "Reduced electromigration of Cu wires by surface Toating", Appl. Phys. Lett. 81, pp. 1782-1784, 2002.
4. AH. Fisher et al "Electromigration failure Mechanism Studies on Copper Tnterconnects ", IEEE IITC pp, 139-141,2002.
5. A.von Glasow et al., "The Influence of the SiN cap process on the Tlectromigration and stressvoiding performance of dual damascene Cu Tnterconnects", Proc. 41th Annual Reliability Physics Symposium, IEEE, 2003,ppl46-150.
6. M.-H, Lin et al, "A Practical Methodology for Multi-modality Cu Tlectromigration Lifetime Prediction" Proc. 2002 International Tntegrated Reliability Workshop, Oct 21-24,2002
7. J. Noguchi et al., "Effect of NH3-Plasma Treatment and CMP Todification on TDDB Improvement Cu Metallization", IEEE Trans, On Tlec. Devices 48, ppl 340-1345,2001.
8. B.-Z. Li et al., "Line Depletion Electromigration Characteristic of Cu Tnterconnects", Proc. 41th Annual Reliability Physics Symposium, IEEE, 2003,ppl40-145.