Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 7-10

  Choi, H Y ^a   Wong, H ^a   Filip, V ^a   Sen, B ^a   Kok, C W ^b   Chan, M ^b   Poon, M C ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Insulator trap; Interface trap; Oxidation; Silicon oxynitride

Indexed keywords

HYDROGEN; NITROGEN; OXIDATION; PERMITTIVITY; PHASE SEPARATION;

INSULATOR TRAP; INTERFACE TRAP; SILICON OXYNITRIDE;

SILICON NITRIDE;

EID: 33644919644     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.018     Document Type: Conference Paper

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