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Volumn 504, Issue 1-2, 2006, Pages 7-10
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Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride
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Author keywords
Insulator trap; Interface trap; Oxidation; Silicon oxynitride
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Indexed keywords
HYDROGEN;
NITROGEN;
OXIDATION;
PERMITTIVITY;
PHASE SEPARATION;
INSULATOR TRAP;
INTERFACE TRAP;
SILICON OXYNITRIDE;
SILICON NITRIDE;
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EID: 33644919644
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2005.09.018 Document Type: Conference Paper |
Times cited : (4)
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References (18)
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