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Volumn 504, Issue 1-2, 2006, Pages 7-10

Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride

Author keywords

Insulator trap; Interface trap; Oxidation; Silicon oxynitride

Indexed keywords

HYDROGEN; NITROGEN; OXIDATION; PERMITTIVITY; PHASE SEPARATION;

EID: 33644919644     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.018     Document Type: Conference Paper
Times cited : (4)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.