Analysis of grain boundary induced nonlinear output characteristics in polycrystalline-silicon thin-film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 3 A, 2006, Pages 1540-1547

  Ikeda, Hiroyuki ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Drain current; Grain boundary; Nonlinear current; Polycrystalline silicon; Scaling law; Thin film transistor

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTANCE; FERMI LEVEL; NONLINEAR OPTICS; POLYSILICON; THIN FILM TRANSISTORS;

DRAIN CURRENT; DRAIN VOLTAGE; GRAIN SIZES; NONLINEAR CURRENT; SCALING LAWS;

GRAIN BOUNDARIES;

EID: 33644906698     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.1540     Document Type: Article

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