Physically based compact device model for fully depleted and nearly fully depleted SOI MOSFET

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 1914-1923

  Banna, Srinivasa R ^a   Chan, Philip C H ^a   Chan, Mansun ^a   Ko, Ping K ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC NETWORK PARAMETERS; ELECTRIC RESISTANCE; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

DRAIN CURRENTS; FLOATING BODY EFFECTS; SELF HEATING;

MOSFET DEVICES;

EID: 0030285534     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543027     Document Type: Article

References (28)

1. J. P. Colinge Silicon-On-Insulator Technology: Materials to VLSI. 1991 Kluwer Amsterdam
2. J. P. Eggermont D. Flandre R. Gillon J. P. Colinge A 1 GHz operational transconductance amplifier in SOI technology Proc. IEEE Int. SOI Conf. 127 128 Oct. 1995 4044 11594 526493
3. T. C. Hsiao N. A. Kistler J. C. S. Woo Modeling the $I{\hbox{{--}}}V$ characteristics of fully depleted submicrometer SOI MOSFET's IEEE Electron Device Lett. 15 45 47 1994 55 7066 285378
4. R. Tu C. Wann J. King P. Ko C. Hu SOI MOSFET mod modeling using AC conductance technique to determine heating Proc. IEEE Int. SOI Conf. 21 22 1994 3915 11345 514209
5. S. Veeraraghavan J. G. Fossum A physically short-channel model for the thin-film SOI MOSFET applicable to device and circuit CAD IEEE Trans. Electron Devices 35 409 1988 16 386 7399
6. J. Y. Choi J. G. Fossum Analysis and control of floating body bipolar effects in fully depleted submicrometer SOI MOSFET's IEEE Trans. Electron Devices 38 1384 1391 1991 16 2677 81630
7. D.-S. Jeon D. E. Burk A temperature-dependent SOI MOSFET model for high-temperature application (27󈠴 $^{\circ}$ C) IEEE Trans. Electron Devices 38 2101 2111 1991 16 2732 83736
8. G. T. Wright Simple and continuous MOSFET model for the computer-aided-design of VLSI Proc. IEEE 132 187 194 1985
9. J. Chen R. Solomon T.-Y. Chan P. K. Ko C. Hu A CV technique for measuring thin SOI film thickness IEEE Electron Device Lett. 12 453 455 1991 55 3413 119163
10. D. K. Sadana Y. J. Mii H. J. Hovel J. Y. C. Sun Y. Taur C. Demic K. Chan S. Cohen Fully depleted 0.25 $\\mu$ m nMOSFET's on SOS, SIMOX and BSOI substrates Proc.IEEE Int. SOI Conf. 6 8 1994 3915 11345 514202
11. M. S. Lee W. Redman-White B. M. Tenbroek M. Robinson Modeling of thin-film SOI devices for circuit simulation including per-instance dynamic self-heating effects Proc. IEEE Int. SOI Conf. 150 151 1993 1077 8025 344556
12. A. G. Sagnis J. T. Clemens Characterization of electron velocity in the inverted, 100. Si surface Tech. Dig.---Int. Electron Device Meet. 18 21 1979
13. M. S. Liang J. Y. Choi P. K. Ko C. Hu Inversion-layer capacitance and mobility of very thin gate-oxide MOSFET's IEEE Trans. Electron Devices 33 409 1986
14. J. Wong N. Kistler J. Woo C. R. Viswanathan Mobility field behavior of fully depleted SOI MOSFETS IEEE Elec. Dev. Lett. EDL-15 117 119 1994 55 7068 285411
15. M. C. Jeng P. K. Ko C. Hu A deep submicron MOSFET model for analog and digital circuit simulation Tech. Dig.---Int. Electron Device Meet. 18 21 1979
16. Y. P. Tsividis Operation and Modeling of the MOS Transistor. 1987 McGraw-Hill New York
17. N. D. Arora R. Rios C.-L. Huang K. Raol PCIM: A physically based continuous short-channel IGFET model for circuit simulation IEEE Trans. Electron Devices 41 988 997 1994 16 7247 293312
18. T. Y. Chan P. K. Ko C. Hu Dependence of channel electric field on device scaling IEEE Electron Device Lett. EDL-6 10 551 553 1985
19. Y. Yamaguchi Y. Inoue SOI DRAM: Its features and possibility Proc. 1995 IEEE Int. SOI Conf. 122 124 Oct. 1995 4044 11594 526491
20. Y. Cheng T. A. Fjeldly Unified submicrometer SOI/MOSFET model for circuit simulation Proc. IEEE Int. SOI Conf. 11 12 1994 3915 11345 514204
21. L. T. Su D. A. Antoniadis N. D. Arora B. S. Doyle D. B. Krakauer SPICE model and parameters for fully-depleted SOI NMOSFET's including self-heating IEEE Electron Device Lett. 15 374 376 1994 55 7700 320972
22. T. Y. Chan P. K. Ko C. Hu A simple method to characterize substrate current in MOSFET's IEEE Electron Device Lett. EDL-5 12 505 507 1984
23. MATLAB Version 4.2c, User's Manual.
24. K. A. Jenkins J. Y. C. Sun J. L. Pelloie Measurement of SOI MOSFET $I{\hbox{{--}}}V$ characteristics without self-heating Proc. IEEE Int. SOI Conf. 121 122 1994 3915 11345 514276
25. G. S. Gildenblat VLSI Electronics: Microstructure Science 18 13 16 1989
26. M. J. Sherony L. T. Su J. E. Chung D. A. Antoniadis Inversion electrone effective mobility in SOI MOSFETS Proc. IEEE Int. SOI Conf. 120 121 1993 1077 8025 344567
27. S. R. Banna P. C. H. Chan P. K. Ko C. T. Nguyen M. Chan Threshold voltage model for deep-submicrometer fully depleted SOI MOSFET's IEEE Trans. Electron Devices 42 1949 1955 1995 16 9898 469402
28. N. D. Arora MOSFET Models for VLSI Circuit Simulation---Theory and Practice. 1993 Springer-Verlag New York/Vienna