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Volumn 483-485, Issue , 2005, Pages 283-286
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Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability
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Author keywords
6H SiC single crystals; Dislocations; Etching; Etching furnace; Molten KOH; Temperature profile; Thermoelement
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Indexed keywords
DISLOCATIONS (CRYSTALS);
ETCHING;
POTASSIUM HYDROXIDE;
SINGLE CRYSTALS;
TEMPERATURE MEASUREMENT;
DEFECT STATISTICS;
ETCHING FURNACE;
TEMPERATURE PROFILE;
THERMOELEMENT;
SILICON CARBIDE;
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EID: 33644909498
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/0-87849-963-6.283 Document Type: Conference Paper |
Times cited : (9)
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References (6)
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