Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 281-284

  Yakimova, R ^a   Syvajarvi M ^a   Iakimov, T ^a   Okunev, A O ^b   Udal'tsov, V E ^b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Yaroslava Mudroga Univ of Novgorod   (Russian Federation)

Author keywords

Structural Defects; Sublimation Growth; Transition Layer

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ETCHING; SURFACE PROPERTIES; THERMAL CONDUCTIVITY;

TRANSITION LAYER;

SILICON CARBIDE;

EID: 0242496996     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.281     Document Type: Conference Paper

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