Optimization of 2H, 4H and 6H-SiC high speed vertical MESFETs

Diamond and Related Materials

Volumn 11, Issue 3-6, 2002, Pages 1254-1257

  Bertilsson, K ^a,b   Nilsson, H E ^a  

^a MID SWEDEN UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Device modeling; MESFET; SiC

Indexed keywords

COMPUTER SIMULATION; GEOMETRY; MICROWAVE DEVICES; OPTIMIZATION;

MICROWAVE APPLICATIONS;

MESFET DEVICES;

SILICON CARBIDE;

EID: 0036508085     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(01)00550-7     Document Type: Article

References (14)