Light-induced modification of a-SiOx II: Laser crystallization

Journal of Applied Physics

Volumn 95, Issue 8, 2004, Pages 4060-4068

  Janotta, Andreas ^a   Dikce, Yavuz ^a   Schmidt, Matthias ^a   Eisele, Christopher ^a   Stutzmann, Martin ^a   Luysberg, Martina ^b   Houben, Lothar ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; ENERGY GAP; GRAIN SIZE AND SHAPE; IRRADIATION; LASER BEAM EFFECTS; LASER PULSES; LIGHT INTERFERENCE; NUCLEATION; OXYGEN; PHASE SEPARATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SOLID STATE LASERS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION;

ELECTRIC TRANSPORT; SILICON SUBOXIDES; SOLID PHASE CRYSTALLIZATION; SUPERLATERAL GROWTH;

AMORPHOUS SILICON;

EID: 2342467516     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1667008     Document Type: Article

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