Influence of process parameters on the properties of the tantalum oxynitride thin films deposited by pulsing reactive gas sputtering

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 2, 2006, Pages 328-333

  Banakh, O ^a   Heulin, T ^b   Schmid, P E ^b   Le Dro H ^a   Tkalcec, I ^b   Lvy F ^b   Steinmann, P A ^a  

^a University of Applied Sciences   (Switzerland)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DEPOSITION; GLASS; LIGHT TRANSMISSION; MAGNETRON SPUTTERING; OXIDATION; OXYGEN; TANTALUM COMPOUNDS;

OXYGEN PULSE DURATION; PROCESS PARAMETERS; REACTIVE GAS SPUTTERING; TANTALUM OXYNITRIDE;

THIN FILMS;

EID: 33644610337     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2172946     Document Type: Article

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