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Thin Solid Films

Volumn 313-314, Issue , 1998, Pages 424-429

In situ ellipsometry for monitoring nucleation and growth of silicon on silicon dioxide

(3) Basa, C a Hu, Y Z b Irene, E A a

a University of North Carolina at Chapel Hill (United States)

b AG Associates (United States)

Author keywords

Ellipsometry; Nucleation; Silicon; Silicon dioxide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; FILM GROWTH; GRAIN SIZE AND SHAPE; HYDROGEN; ION BOMBARDMENT; NUCLEATION; PASSIVATION; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICA; SPECTROPHOTOMETRY;

RAPID THERMAL CHEMICAL VAPOR DEPOSITION; SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING FILMS;

EID: 0032003729 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00858-4 Document Type: Article

Times cited : (11)

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