InGaN-channel FETs - Growth, technology and characteristics

Materials Research Society Symposium Proceedings

Volumn 680, Issue , 2001, Pages 26-36

  Kohn, E ^a   Daumiller, I ^a   Neuburger, M ^a   Seyboth, M ^a   Kirchner, C ^a   Kamp, M ^b  

^a UNIVERSITY OF ULM   (Germany)

^b Global Light Industries   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; STRAIN MEASUREMENT;

BARRIER LAYERS; CHANNEL CHARACTERISTICS; MODULATION DOPING; STRAIN FIELDS;

FIELD EFFECT TRANSISTORS;

EID: 0003368143     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-680-e3.1     Document Type: Conference Paper

References (10)

1. W. Y. Feng, D. Kapolnek, J. P. Ibbetson, P. Parikh, B. P. Keller, and U. K. Mishra, "Very-high power density AlGaN/GaN HEMTs," IEEE Transactions on Electron Devices, vol. 48 no. 3, pp. 586-590, 2001
2. L. F. Eastman, V. Tilak, J. Smart, B. M. Green, E. M. Chumbes, R. Dimitrov, K. Hyungtak, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, J. R. Shealy, "Undoped AlGaN/GaN HEMTs for microwave power amplification," IEEE Transactions on Electron Devices, vol. 48, no. 3, pp. 479-485, 2001
3. J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors," Applied Physics Letters, vol. 77, no. 2, pp. 250-252, 2000
4. E. Kohn, I. Daumiller, P. Schmid, N. X. Nguyen, C. Nguyen; "Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistors"; Electronics Letters, vol. 35, no. 12, pp. 1022-1024, 1999
5. I. Daumiller, D. Theron, C. Gaquière, A. Vescan, R. Dietrich, A. Wieszt, H. Leier, R. Vetury, U. K. Mishra, I. P. Smorchkova, S. Keller, N. X. Nguyen, C. Nguyen, and E. Kohn, "Current Instabilities in GaN-based Devices", IEEE Electron Device Letters, vol. 22, no. 2, 2001
6. R. Vetury, N. Q. Zhang, S. Keller, U. K. Mishra, "The Impact of Surface States on the DC and RF Characteristics of AlGaN/GaN HFETs," IEEE Transactions on Electron Devices, vol. 48 no. 3, pp. 560 -566, 2001
7. M.J. Reed, N.A. El-Masry, C.A. Parker, J.C. Roberts, S.M. Bedair, "Critical layer thickness determination of GaN/InGaN/GaN double heterostructures," Appl. Phys. Lett., vol. 77, no. 25, 2000
8. F. Bernardini, V. Fiorentini, D. Vanderbilt, "Spontaneous polarization and piezoelectric constants of III-V nitrides," Physical Review B, vol. 56, no. 16, 1997
9. O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff , L. F. Eastman, R. Dimitrov, A. Mitchell, M. Stutzmann, "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures," J. of Appl. Phys., vol. 87, no. 1, 2000
10. M. Spencer, Cornell University, Ithaca, NY, Presented at WOCSEMMAD 2001, New Orleans, February 2001