Ni diffusion studies from fully-silicided NiSi into Si

Electrochemical and Solid-State Letters

Volumn 9, Issue 4, 2006, Pages

  Zhao, P ^a   Trachtenberg, I ^a,b   Kim, M J ^a,b   Gnade, B E ^a   Wallace, R M ^a,b  

^a The University of Texas at Dallas   (United States)

^b ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAS ANNEALING; SILICON CHANNEL;

ANNEALING; DIELECTRIC FILMS; DIFFUSION; SECONDARY ION MASS SPECTROMETRY; SILICON;

NICKEL COMPOUNDS;

EID: 33244479588     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2167927     Document Type: Article

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