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Volumn 86, Issue 4, 1999, Pages 2237-2244

Deuterium transport through device structures

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0012062386     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371036     Document Type: Article
Times cited : (22)

References (32)
  • 5
    • 0031621998 scopus 로고    scopus 로고
    • Hydrogen in Semiconductors and Metals, edited by N. H. Nickel, W. B. Jackson, R. C. Bowman, and R. G. Liesure
    • Z. Chen, J. Lee, and J. Lyding, in Hydrogen in Semiconductors and Metals, edited by N. H. Nickel, W. B. Jackson, R. C. Bowman, and R. G. Liesure, Mater. Res. Soc. Symp. Proc. 513, 313 (1998).
    • (1998) Mater. Res. Soc. Symp. Proc. , vol.513 , pp. 313
    • Chen, Z.1    Lee, J.2    Lyding, J.3
  • 7
    • 0042474646 scopus 로고    scopus 로고
    • (Charles Evans & Associates, Redwood City, CA); (b) H- and D-implanted in Si by IICO Corp., CA. The quoted hydrogen dose was cross-calibrated with standard (a) and was found to be within 5%. The deuterium dose was used asquoted
    • (a) H-implant in Si: Standard Reference Material (Charles Evans & Associates, Redwood City, CA); (b) H- and D-implanted in Si by IICO Corp., CA. The quoted hydrogen dose was cross-calibrated with standard (a) and was found to be within 5%. The deuterium dose was used asquoted.
    • H-implant in Si: Standard Reference Material
  • 8
    • 0042474645 scopus 로고
    • edited by C. R. Helms and B. E. Deal Plenum, New York
    • 2 Interface 2, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1993), p. 393;
    • (1993) 2 Interface 2 , vol.2 , pp. 393
    • Stathis, J.H.1
  • 10
    • 4243220339 scopus 로고    scopus 로고
    • (b) A. Stesmans and V. V. Afanas'ev, J. Phys.: Condens. Matter 9, 3299 (1997), and references therein, 10, L19 (1998).
    • (1998) J. Phys.: Condens. Matter , vol.10
  • 14
    • 0031617730 scopus 로고    scopus 로고
    • Hydrogen in Semiconductors and Metals, edited by N. H. Nickel, W. B. Jackson, R. C. Bowman, and R. G. Liesure
    • P. J. Chen and R. M. Wallace, in Hydrogen in Semiconductors and Metals, edited by N. H. Nickel, W. B. Jackson, R. C. Bowman, and R. G. Liesure, Mater. Res. Soc. Symp. 513, 325 (1998).
    • (1998) Mater. Res. Soc. Symp. , vol.513 , pp. 325
    • Chen, P.J.1    Wallace, R.M.2
  • 16
    • 85034154020 scopus 로고    scopus 로고
    • note
    • 2.
  • 27
    • 26544473410 scopus 로고
    • K. L. Brower, Appl. Phys. Lett. 53, 508 (1998); Phys. Rev. B 38, 9657 (1988).
    • (1988) Phys. Rev. B , vol.38 , pp. 9657


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.