S-parameter-measurement-based high-speed signal transient characterization of VLSI interconnects on SiO2-Si substrate

IEEE Transactions on Advanced Packaging

Volumn 23, Issue 3, 2000, Pages 470-479

  Eo, Yungseon ^b   Eisenstadt, William R ^a,c   Shim, Jongin ^b  

^a IEEE   (United States)

^b Hanyang University   (South Korea)

^c University of Florida   (United States)

Author keywords

S parameter; Signal delay; Signal transient; Silicon substrate; Transmission line; VLSI interconnect

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC DELAY LINES; SCATTERING PARAMETERS; SEMICONDUCTING SILICON; SILICA; SUBSTRATES; TIME DOMAIN ANALYSIS; TRANSMISSION LINE THEORY; VLSI CIRCUITS; WAVEFORM ANALYSIS;

SIGNAL DELAY; SIGNAL TRANSIENT; SILICON SUBSTRATE;

INTEGRATED CIRCUIT TESTING;

EID: 0034239083     PISSN: 15213323     EISSN: None     Source Type: Journal    
DOI: 10.1109/6040.861562     Document Type: Article

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