Impurity incorporation during epitaxial growth of GaAs by chemical reaction

Journal of Crystal Growth

Volumn 218, Issue 2, 2000, Pages 167-172

  Gandouzi, M ^a   Bourgoin, J C ^a   Mimila Arroyo, J ^b   Grattepain, Cl ^c   Grattepain, Ch ^d  

^a SORBONNE UNIVERSITÉ   (France)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

^c THALES   (France)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY;

IMPURITY TRANSPORT;

CRYSTAL GROWTH;

EID: 0034276151     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00536-4     Document Type: Article

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