Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorods

Nanotechnology

Volumn 16, Issue 4, 2005, Pages 448-450

  Hsueh, T H ^a   Huang, H W ^a   Lai, F I ^a   Sheu, J K ^b   Chang, Y H ^a   Kuo, H C ^a   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; EXCITONS; INDIUM COMPOUNDS; INDUCTIVELY COUPLED PLASMA; LIGHT EMITTING DIODES; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

EXCITATION-POWER-DEPENDENT SPECTRA; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; INDUCTIVELY COUPLED PLASMA DRY ETCHING; MICRO-PHOTOLUMINESCENCE;

PHOTOLUMINESCENCE;

EID: 24144440356     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/16/4/020     Document Type: Article

References (10)

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