Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate

Journal of Crystal Growth

Volumn 249, Issue 1-2, 2003, Pages 72-77

  Li, Dabing ^a   Dong, Xun ^a   Huang, Jinsong ^a   Liu, Xianglin ^a   Xu, Zhongying ^a   Wang, Xiaohui ^a   Zhang, Ze ^b   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

A1. Nanostructures; A1. Stretched exponential; A1. Time resolved photoluminescence; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. InAlGaN

Indexed keywords

EXCITONS; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PARAMETER ESTIMATION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

QUANTUM DISKS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037297815     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02101-2     Document Type: Conference Paper

References (25)

1. S. Nakamura, S. Pearton, G. Fasol, The Blue Laser Diode: The Complete Story, Springer, New York, 2000.
2. Akasaki I., Amano H., Koide Y., Hiramatsu K., Sawaki N. J. Crystal Growth. 98:1989;209.
3. Sitar Z., Smith L.L., Davis F. J. Crystal Growth. 141:1994;11.
4. Pearton S.J., Zolper J.C., Shul R.J., Ren F. J. Appl. Phys. 86:1999;1.
5. Nakamura S., Senoh M., Iwasa N., Nagahama S. Jpn. J. Appl. Phys. 34:1995;L797.
6. Kim H.S., Mair R.A., Li J., Lin J.Y., Jiang H.X. Appl. Phys. Lett. 76:2000;1252.
7. Kim H.S., Lin J.Y., Jiang H.X. Appl. Phys. Lett. 73:1998;3426.
8. Asif Khan M., Yang J.W., Simin G.et al. Appl. Phys. Lett. 76:2000;1161.
9. Mclntosh F.G., Boutros K.S., Roberts J.C.et al. Appl. Phys. Lett. 68:1996;40.
10. Oder T.N., Li J., Lin J.Y., Jiang H.X. Appl. Phys. Lett. 77:2000;791.
11. Lima A.P., Misky C.R., Karrer U.et al. J. Crystal Growth. 220:2000;341.
12. Tamulaitis G., Kazlauskas K., Jursenas S., Zukauskas A. Appl. Phys. Lett. 77:2000;2136.
13. Mee-Yi Ryu, C.Q.Chen, E. Kuokstis, J.W. Yang, G. Simin, M. Asif Khan, Appl. Phys. Lett. 80(2002) 3730.
14. Han P.D., Wang Z.G., Duan X.F., Zhang Z. Appl. Phys. Lett. 78:2001;3974.
15. Pavesi L., Ceschini M. Phys. Rev. B. 48:1993;17625.
16. Kobitski A.Yu., Zhuravlev K.S. Phys. Rev. B. 63:1993;115423.
17. Chen X., Henderson B., O'Donnell K.P. Appl. Phys. Lett. 60:1992;2672.
18. Lin T.Y., Fan J.C., Chen Y.F. Semicond. Sci. Technol. 14:1999;406.
19. Pophristic M., Long F.H. J. Appl. Phys. 86:1999;1114.
20. Chichibu S.F., Sugiyama M., Onuma T. Appl. Phys. Lett. 79:2001;4319.
21. Scher H., Shlesinger M.F., Bender J.T. Phys. Today. 26:1991;24.
22. Li J., Nam B., Kim K.H., Lin J.Y., Jiang H.X. Appl. Phys. Lett. 78:2001;61.
23. Kakalios J., Street R.A., Jackson W.B. Phys. Rev. Lett. 59:1987;1037.
24. Akiyama H., Koshiba S., Someya T.et al. Phys. Rev. Lett. 72:1994;924.
25. Chichibu S., Sota T., Wada K., Nakamura S. J. Vac. Sci. Technol. B. 16:1998;2204.