Microstructural defect characterisation of a-Si:H deposited by low temperature HW-CVD on paper substrates

Thin Solid Films

Volumn 501, Issue 1-2, 2006, Pages 79-83

  Britton, D T ^a   Harting M ^a   Knoesen, D ^b   Sigcau, Z ^a   Nemalili, F P ^a   Ntsoane, T P ^a,c   Sperr, P ^d   Egger, W ^d   Nippus, M ^e  

^a UNIVERSITY OF CAPE TOWN   (South Africa)

^b UNIVERSITY OF THE WESTERN CAPE   (South Africa)

^c MATERIALS RESEARCH GROUP   (South Africa)

^d BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^e Huber Diffraktionstechnik GmbH and Co KG   (Germany)

Author keywords

a Si:H; Low temperature HW CVD; Paper substrates; Positron annihilation; X ray diffraction

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; ELECTRICAL ENGINEERING; MICROSTRUCTURE; SUBSTRATES; X RAY DIFFRACTION;

DANGLING-BOND COMPLEX; LOW TEMPERATURE HW-CVD; PAPER SUBSTRATES; POSITRON ANNIHILATION;

SILANES;

EID: 32644480116     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.111     Document Type: Conference Paper

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