Structural characterization of hydrogenated a-Si using slow positron beam techniques

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 164, Issue , 2000, Pages 1010-1015

  Britton, D T ^a   Hempel, A ^a   Knoesen, D ^b   Bauer Kugelmann, W ^c   Triftshauser W ^c  

^a UNIVERSITY OF CAPE TOWN   (South Africa)

^b UNIVERSITY OF THE WESTERN CAPE   (South Africa)

^c BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEFECTS; POSITRONS; SPECTROSCOPY;

POSITRON BEAMS;

AMORPHOUS SILICON;

EID: 0033748627     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)01053-8     Document Type: Article

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