A high-frequency nonquasi-static analytical model including gate leakage effects for on-chip decoupling capacitors

IEEE Transactions on Advanced Packaging

Volumn 29, Issue 1, 2006, Pages 88-97

  Rius, Josep ^a   Meijer, Maurice ^b  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Gate leakage; Nonquasi static MOS models; On chip decoupling capacitor

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON;

GATE LEAKAGE; NONQUASI-STATIC MOS MODELS; ON-CHIP DECOUPLING CAPACITOR;

MOS CAPACITORS;

EID: 32444446247     PISSN: 15213323     EISSN: None     Source Type: Journal    
DOI: 10.1109/TADVP.2005.862658     Document Type: Article

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