Dislocation density of GaN grown by hydride vapor phase epitaxy

MRS Internet Journal of Nitride Semiconductor Research

Volumn 6, Issue , 2001, Pages

  Lee, Kyoyeol ^a   Auh, Keunho ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ETCHING; FILM GROWTH; NONDESTRUCTIVE EXAMINATION; PHOTOLUMINESCENCE; PITTING; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

DISLOCATION DENSITIES; ETCH PIT DENSITY (EPD); MICRO PHOTOLUMINESCENCE MAPPING; THREADING DISLOCATION;

GALLIUM NITRIDE;

EID: 3242778633     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300000211     Document Type: Article

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