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Journal of the Electrochemical Society

Volumn 151, Issue 7, 2004, Pages

Kinetics of Ni-mediated crystallization of a-Si through a SiNx cap layer

(6) Choi, Jong Hyun a Kim, Seung Soo a Cheon, Jun Hyuk a Park, Seong Jin a Son, Yong Duck a Jang, Jin a

a Kyung Hee University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; GRAIN SIZE AND SHAPE; HEAT TREATMENT; MASS SPECTROMETRY; NICKEL; OPTICAL MICROSCOPY; PASSIVATION; REACTION KINETICS; SPUTTERING;

CAP LAYERS; METAL DIFFUSION; SYSTEM-ON-PANEL (SOP);

SILICON NITRIDE;

EID: 3242723453 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1752936 Document Type: Article

Times cited : (24)

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