Temperature dependence of the growth of super-grain polycrystalline silicon by metal induced crystallization

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 289-293

  Choi, Jong Hyun ^a   Kim, Do Young ^a   Park, Seong Jin ^a   Choo, Byoung Kwon ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Annealing; Crystallization; Nickel

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; GRAIN GROWTH; GRAIN SIZE AND SHAPE; OPTICAL MICROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

METAL INDUCED CRYSTALLIZATION (MIC);

POLYSILICON;

EID: 0037416535     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01150-1     Document Type: Conference Paper

References (12)

1. Yoon S.Y., Park S.J., Kim K.H., Jang J. Thin Solid Films. 383:2001;34.
2. Sposili R.S., Im J.S. Appl. Phys. Lett. 69:1996;2864.
3. Girginoudi S., Girginoudi D., Thanailakis A., Georgoulas N. J. Appl. Phys. 84:1998;1968.
4. Noguchi T., Usui S., Gosain D.P., Ikeda Y. Mat. Res. Soc. Symp. Proc. 557:1999;213.
5. Im J.S., Kim H.J. Appl. Phys. Lett. 64:1994;2303.
6. Jagar S., Chan M., Wang H., Poon V.M.C., Myansnikov A.M. Solid State Electronics. 45:2001;743.
7. Jang J., Oh J.Y., Kim S.K., Choi Y.J., Yoon S.Y., Kim C.O. Nature. 395:1998;481.
8. Jang J., Park S.J., Kim K.H., Cho B.R., Kwak W.K., Yoon S.Y. J. Appl. Phys. 88:2000;3099.
9. Lam L.K., Chen S.K., Ast D.G. Appl. Phys. Lett. 74:1999;1866.
10. Kim H., Couillard J.G., Ast D.G. Appl. Phys. Lett. 72:1998;803.
11. Jin Z., Bhat G.A., Yeung M., Kwok H.S., Wong M. J. Appl. Phys. 84:1998;194.
12. Jaccodin R.J. J. Electrochem. Soc. 110:1963;524.