Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1650-1652

  Bennett, B R ^a   Bracker, A S ^a   Magno, R ^a   Boos, J B ^a   Bass, R ^a   Park, D ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THERMAL EFFECTS; TUNNEL DIODES;

BUFFER LAYERS; RESONANT INTERBAND TUNNELING DIODES;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0034187794     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591482     Document Type: Article

References (12)

1. J. P. A. van der Wagt, A. C. Seabaugh, and E. A. Beam III, IEEE Electron Device Lett. 19, 7 (1998).
2. K. Maezawa, H. Matsuzaki, M. Yamamoto, and T. Otsuji, IEEE Electron Device Lett. 19, 80 (1998).
3. J. B. Boos, B. R. Bennett, W. Kruppa, D. Park, J. Mittereder, R. Bass, and M. E. Twigg, J. Vac. Sci. Technol. B 17, 1022 (1999).
4. D. H. Chow, H. L. Dunlap, W. Williamson, S. Enquist, B. K. Gilbert, S. Subramaniam, P. M. Lei, and G. H. Bernstein, IEEE Electron Device Lett. 17, 69 (1996).
5. W. Williamson, S. B. Enquist, D. H. Chow, H. L. Dunlap, S. Subramaniam, P. M. Lei, G. H. Bernstein, and B. K. Gilbert, IEEE J. Solid-State Circuits 32, 222 (1997).
6. J. Shen, S. Tehrani, H. Goronkin, G. Kramer, and R. Tsui, IEEE Electron Device Lett. 17, 94 (1996).
7. J. B. Boos, M. J. Yang, B. R. Bennett, D. Park, W. Kruppa, C. H. Yang, and R. Bass, Electron. Lett. 34, 1525 (1998).
8. B. R. Bennett, M. J. Yang, B. V. Shanabrook, J. B. Boos, and D. Park, Appl. Phys. Lett. 72, 1193 (1998).
9. J. B. Boos, W. Kruppa, B. R. Bennett, D. Park, S. W. Kirchoefer, R. Bass, and H. B. Dietrich, IEEE Trans. Electron Devices 45, 1869 (1998).
10. B. V. Shanabrook, J. R. Waterman, J. L. Davis, and R. J. Wagner, Appl. Phys. Lett. 61, 2338 (1992).
11. B. R. Bennett, B. V. Shanabrook, and E. R. Glaser, Appl. Phys. Lett. 65, 598 (1994).
12. C. Y. Belhadj, K. P. Martin, S. B. Amor, J. J. L. Rascol, R. J. Higgins, R. C. Potter, H. Hier, and E. Hempfling, Appl. Phys. Lett. 57, 58 (1990).