Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage schottky diodes

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 151-154

  Fujiwara, H ^a,b   Kimoto, T ^a   Tojo, T ^b   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

^b Toyotanso ^*  (Japan)

Author keywords

Cathodeluminescence; Fast epitaxy; Photoluminescence; Schottky diode; Stacking fault

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES; STACKING FAULTS;

SCHOTTKY BARRIER HEIGHT; VERTICAL HOT WALL CHEMICAL VAPOR DEPOSITION;

SILICON CARBIDE;

EID: 32144432581     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.151     Document Type: Conference Paper

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