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Volumn 4, Issue 6, 2001, Pages

Wet chemical etching of LiGaO2 and LiAlO2

(10) Hsu, C H a Ip, K P b Johnson, J W b Chu, S N G b Kryliouk, O b Pearton, S J c Li, L d Chai, B H T d Anderson, T J b Ren, F b

a FENG CHIA UNIVERSITY (Taiwan)

b University of Florida (United States)

c LUCENT TECHNOLOGIES (United States)

d UNIVERSITY OF CENTRAL FLORIDA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPOSITION; HYDROCHLORIC ACID; LITHIUM COMPOUNDS; MORPHOLOGY; PHOSPHORIC ACID; SCANNING ELECTRON MICROSCOPY; SOLUTIONS; SULFURIC ACID; THERMAL EFFECTS; WETTING;

ARRHENIUS PLOTS; LITHIUM ALUMINUM DIOXIDE; LITHIUM GALLIUM DIOXIDE; WET CHEMICAL ETCHING;

ETCHING;

EID: 0035383689 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.1368737 Document Type: Article

Times cited : (7)

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