Corrugated surfaces formed on GaAs(331)A substrates: The template for laterally ordered InGaAs nanowires

Nanotechnology

Volumn 17, Issue 4, 2006, Pages 1140-1145

  Gong, Zheng ^a,b   Niu, ZhiChuan ^a   Fang, ZhiDan ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

CORRUGATED SURFACES; MULTI-STACKING; POLARIZATION ANISOTROPY; STEP-ARRAY TEMPLATES;

NANOSTRUCTURED MATERIALS;

EID: 31944449625     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/4/049     Document Type: Article

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