Hydrogen as the cause of step bunching formed on vicinal GaAs(001)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4404-4407

  Hata, Kenji ^a   Shigekawa, Hidemi ^a   Ueda, Takashi ^b   Akiyama, Masahiro ^b   Okano, Tatsuo ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b Oki Semiconductor Technology Laboratory Co Ltd   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Diffusion and migration; Gallium arsenide; Growth; Scanning tunneling microscopy; Stepped single crystal surface; Surface diffusion; Surface structure

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; HYDROGEN; NITROGEN; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SURFACE STRUCTURE;

STEP BUNCHING; STEPPED SINGLE-CRYSTAL SURFACE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034226478     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4404     Document Type: Article

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