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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 10, 1997, Pages 6285-6289

Surface corrugation of GaAs layers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

(5) Yamamoto, Masanori a Higashiwaki, Masataka a Shimomura, Satoshi a Sano, Naokatsu b Hiyamizu, Satoshi a

a OSAKA UNIVERSITY (Japan)

b KWANSEI GAKUIN UNIVERSITY (Japan)

Author keywords

(775)B; AlAs; Atomic force microscopy; Corrugation; GaAs; Molecular beam epitaxy; Transmission electron microscopy

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; FILM GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

SURFACE CORRUGATION;

SEMICONDUCTING FILMS;

EID: 0031250070 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.6285 Document Type: Article

Times cited : (35)

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