Self-Organized InAs Quantum Wires on GaAs (331)A Substrates

Chinese Physics Letters

Volumn 20, Issue 10, 2003, Pages 1819-1821

  Gong, Zheng ^a   Fang, Zhi Dan ^a   Miao, Zhen Hua ^a   Niu, Zhi Chuan ^a   Feng, Song Lin ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES;

DIFFUSION ANISOTROPY; INAS QUANTUM WIRES; LATERAL SIZES; MOLECULAR-BEAM EPITAXY; SELF-ORGANISED; STEP-EDGE;

III-V SEMICONDUCTORS;

EID: 0142022010     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/10/346     Document Type: Article

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