Surface morphology control of strained InAsGaAs (331) A films: From nanowires to island-pit pairs

Applied Physics Letters

Volumn 86, Issue 1, 2005, Pages

  Gong, Z ^a   Niu, Z C ^a   Fang, Z D ^a   Miao, Z H ^a   Feng, S L ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; DEPOSITION; DIFFUSION; GROWTH KINETICS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOSTRUCTURED MATERIALS; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; STRAIN; SURFACES;

DOMAIN GROWTH; ELASTIC STRAIN; NANOWIRES; STRANSKI-KRASTANOW (SK) PROCESS;

SEMICONDUCTING FILMS;

EID: 19744383853     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1846146     Document Type: Article

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