Scanning tunneling microscopy observation of individual boron dopant atoms beneath Si(001)-2 × 1 surfaces

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 46-49, 2005, Pages

  Nishizawa, Masayasu ^a   Bolotov, Leonid ^a   Kanayama, Toshihiko ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Band bending; Dopant profiling; Surface states; Work function

Indexed keywords

ELECTRIC POTENTIAL; IMAGE ANALYSIS; SCANNING TUNNELING MICROSCOPY;

BAND BENDING; DOPANT PROFILING; SURFACE STATES;

BORON;

EID: 31944436947     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1436     Document Type: Article

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