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Volumn 92, Issue 2, 2002, Pages 820-824
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Imaging charged defects on clean Si(100)-(2×1) with scanning tunneling microscopy
a a a b b b b |
Author keywords
[No Author keywords available]
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Indexed keywords
BANDBENDING;
CHARGED DEFECTS;
II-IV SEMICONDUCTORS;
N-TYPE MATERIALS;
P-TYPE;
PERIODIC SURFACES;
SI(1 0 0);
STATE DENSITIES;
STM IMAGES;
STM STUDY;
TUNNELING CURRENT;
CRYSTAL IMPURITIES;
SCANNING TUNNELING MICROSCOPY;
SILICON;
SURFACES;
SURFACE DEFECTS;
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EID: 0037100953
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1486047 Document Type: Article |
Times cited : (32)
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References (10)
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