Development of fast-photospeed chemically amplified resist in extreme ultraviolet lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 7 B, 2005, Pages 5866-5870

  Watanabe, Takeo ^a,c   Hada, Hideo ^b   Lee, Seung Yoon ^a,c   Kinoshita, Hiroo ^a,c   Hamamoto, Kazuhiro ^a,c   Komano, Hiroshi ^b  

^a UNIVERSITY OF HYOGO   (Japan)

^b TOKYO OHKA KOGYO CO LTD   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Chemically amplified resist; EUVL; Fast photospeed resist; Sulfonium salts

Indexed keywords

ANNEALING; DEGASSING; PHOTOLITHOGRAPHY; REACTION KINETICS;

CHEMICALLY AMPLIFIED RESISTS; EUVL; FAST-PHOTOSPEED RESISTS; SULFONIUM SALTS;

PHOTORESISTS;

EID: 31844454954     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.5866     Document Type: Article

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